Fully Integrated Transmitter Chip

47.2-48.2 GHz fully integrated transmitter chip in GF 130nm SiGe BiCMOS with 20 dB conversion gain and 15 dBm output power.

47.2-48.2 GHz20 dB conversion gain15 dBm output power

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Fully integrated transmitter chip layout

Operating band: 47.2–48.2 GHz
Frequency: 47.2-48.2 GHz
Conversion gain: 20 dB

Specifications

Datasheet

Frequency: 47.2-48.2 GHz
Conversion gain: 20 dB
IRR: > 26 dBc
Output power: 15 dBm
LO: 19 GHz
Technology: GF 130nm SiGe BiCMOS
Layout marker: 2 mm x 2 mm
Pin-compatible IC platform: IHP SG13G2 130nm SiGe BiCMOS, fT/fMAX 300/500 GHz
Platform die size: 4.5 x 2.6 mm2
Power supplies: 1.2 V and 2.5 V
TX/RX PDC: 1.35/1.025 W (LB) and 2.125/1.06 W (HB)

Overview

Product brief

The product information presents the transmitter as a separate fully integrated chip in the 47.2-48.2 GHz band.

Performance

The transmitter table lists 20 dB conversion gain, IRR greater than 26 dBc, 15 dBm output power, and 19 GHz LO.

Technology

The process information identifies GF 130nm SiGe BiCMOS technology for this chip.

Pin-compatible IC platform

The mm-wave semiconductor IC slide lists IHP SG13G2 130nm SiGe BiCMOS with fT/fMAX of 300/500 GHz, 4.5 x 2.6 mm2 die size, 1.2 V and 2.5 V supplies, and TX/RX PDC values.

Gallery