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Fully Integrated Receiver Chip

47.2-48.2 GHz fully integrated receiver chip in GF 130nm SiGe BiCMOS with 36.3-37 dB voltage gain.

47.2-48.2 GHz36.3-37 dB voltage gain16.5-20.5 dB NF
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Fully integrated receiver chip layout
Operating band
47.2–48.2 GHz
Frequency
47.2-48.2 GHz
Voltage gain
36.3-37 dB

Specifications

Datasheet

Frequency
47.2-48.2 GHz
Voltage gain
36.3-37 dB
Conversion gain
3.9-14.8 dB
Noise figure
16.5-20.5 dB
LO
19 GHz
Technology
GF 130nm SiGe BiCMOS
Layout marker
2 mm x 2 mm
Pin-compatible IC platform
IHP SG13G2 130nm SiGe BiCMOS, fT/fMAX 300/500 GHz
Platform die size
4.5 x 2.6 mm2
Power supplies
1.2 V and 2.5 V
TX/RX PDC
1.35/1.025 W (LB) and 2.125/1.06 W (HB)

Overview

Product brief

The product information presents the receiver as a separate fully integrated chip in the 47.2-48.2 GHz band.

Performance

The receiver table lists 36.3-37 dB voltage gain, 3.9-14.8 dB conversion gain, 16.5-20.5 dB noise figure, and 19 GHz LO.

Technology

The process information identifies GF 130nm SiGe BiCMOS technology for this chip.

Pin-compatible IC platform

The mm-wave semiconductor IC slide lists IHP SG13G2 130nm SiGe BiCMOS with fT/fMAX of 300/500 GHz, 4.5 x 2.6 mm2 die size, 1.2 V and 2.5 V supplies, and TX/RX PDC values.

Gallery

Receiver image
Chip Layout
Receiver chip layout from slide 8
chip image
Noise Figure performance
Noise Figure performance
Gain performance
Gain performance