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Fully Integrated Radar Front-End Chip

71-81 GHz fully integrated radar front-end chip in GF 130nm SiGe BiCMOS with 10.5 dBm Tx output power and 37 dB receiver conversion gain.

71-81 GHz10.5 dBm Tx output37 dB receiver conversion gain
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Fully integrated radar front-end chip
Operating band
71–81 GHz
RF frequency
71-81 GHz
Tx output power
10.5 dBm

Specifications

Datasheet

RF frequency
71-81 GHz
Tx output power
10.5 dBm
Receiver conversion gain
37 dB
Noise figure
8.5 dB
LO
19 GHz
Technology
GF 130nm SiGe BiCMOS
Layout marker
2 mm x 2 mm

Overview

Product brief

The product information lists this as a separate fully integrated radar front-end chip under fully integrated front-end chips.

Performance

The radar front-end table lists 71-81 GHz RF frequency, 10.5 dBm Tx output power, 37 dB receiver conversion gain, 8.5 dB noise figure, and 19 GHz LO.

Technology

The process information identifies GF 130nm SiGe BiCMOS technology for this chip.

Gallery

Radar front-end chip
chip layout
Noise Figure Performance
Noise Figure Performance
Gain Performance
Gain Performance